Staff / Principal Device Engineer (Semicon, All Devices) x 5

RANDSTAD PTE. LIMITEDSingaporemycareersfuturepublished 08/27/2026
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Must-have:Principal

Key Responsibilities: Device Physics & Architecture Design: Modeling, benchmarking, and optimizing active/passive device structures across specialty platforms (BCD, GaN/SiC Power, Silicon Photonics, High-Voltage, or CMOS).

TCAD Simulation: Executing 2D/3D TCAD process and device simulations (Synopsys TCAD / Silvaco) to evaluate process windows, breakdown voltage, and parasitic behavior.

Electrical Characterization (PCM/WAT): Designing test structures and conducting DC, CV, RF, and pulsed measurements for parameter extraction.

Reliability & Yield Co-Optimization: Investigating degradation mechanisms (HCI, BTI, TDDB, ESD, Latch-up) and working with Integration teams to fix ET/PCM yield excursions.

PDK & Compact Modeling Support: Collaborating with Design Enablement to extract SPICE compact models (BSIM, PSP).

Qualifications: Education: Master's or Ph.D. in Microelectronics, Electrical Engineering, Physics, or Materials Science.

Experience: 8+ years (Staff) or 12+ years (Principal) in device physics, TCAD modeling, and electrical characterization within a foundry/IDM environment.